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aft05ms031nr1 aft05ms031gnr1 1 rf device data freescale semiconductor, inc. rf power ldmos transistors high ruggedness n--channel enhancement--mode lateral mosfets designed for mobile two--way radio applications with frequencies from 136 to 520 mhz. the high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment. typical performance: (13.6 vdc, t a =25 c, cw) frequency (mhz) g ps (db) d (%) p1db (w) 380--450 (1,3) 18.3 64.1 31 450--520 (2,3) 17.7 62.0 31 520 (4) 17.7 71.4 33 load mismatch/ruggedness frequency (mhz) signal type vswr p out (w) test voltage result 520 (4) cw >65:1 at all phase angles 47 (3 db overdrive) 17 no device degradation 1. measured in 380--450 mhz uhf wideband reference circuit. 2. measured in 450--520 mhz uhf wideband reference circuit. 3. the values shown are the minimum m easured performance numbers across the indicated frequency range. 4. measured in 520 mhz narrowband test circuit. features ? characterized for operation from 136 to 520 mhz ? unmatched input and output allowing wide frequency range utilization ? integrated esd protection ? integrated stab ility enhancements ? wideband ? full power across the band: ? 136--174 mhz ? 380--450 mhz ? 450--520 mhz ? 225 c capable plastic package ? exceptional thermal performance ? high linearity for: tetra, ssb, lte ? cost--effective over--molded plastic packaging ? in tape and reel. r1 suffix = 500 units, 24 mm tape width, 13 inch reel. typical applications ? output stage vhf band mobile radio ? output stage uhf band mobile radio document number: aft05ms031n rev. 0, 6/2012 freescale semiconductor technical data 136--520 mhz, 31 w, 13.6 v wideband rf power ldmos transistors aft05ms031nr1 aft05ms031gnr1 t o -- 2 7 0 -- 2 plastic aft05ms031nr1 figure 1. pin connections (top view) drain gate note: the backside of the package is the source terminal for the transistor. t o -- 2 7 0 -- 2 g u l l plastic aft05ms031gnr1 ? freescale semiconductor, inc., 2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. aft05ms031nr1 aft05ms031gnr1 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +40 vdc gate--source voltage v gs --6.0, +12 vdc operating voltage v dd 17, +0 vdc storage temperature range t stg --65 to +150 c total device dissipation @ t c =25 c derate above 25 c p d 294 1.47 w w/ c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 79 c, 31 w cw, 13.6 vdc, i dq = 10 ma, 520 mhz r jc 0.67 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 2500 v machine model (per eia/jesd22--a115) a, passes 100 v charge device model (per jesd22--c101) iv, passes 2000 v table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =40vdc,v gs =0vdc) i dss ? ? 2 adc zero gate voltage drain leakage current (v ds = 13.6 vdc, v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 600 nadc on characteristics gate threshold voltage (v ds =10vdc,i d =115 adc) v gs(th) 1.6 2.1 2.6 vdc drain--source on--voltage (v gs =10vdc,i d =1.2adc) v ds(on) ? 0.13 ? vdc forward transconductance (v gs =10vdc,i d =7.5adc) g fs ? 5.8 ? s 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. (continued)
aft05ms031nr1 aft05ms031gnr1 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit dynamic characteristics reverse transfer capacitance (v ds = 13.6 vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 1.6 ? pf output capacitance (v ds = 13.6 vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 49.5 ? pf input capacitance (v ds = 13.6 vdc, v gs =0vdc 30 mv(rms)ac @ 1 mhz) c iss ? 109 ? pf functional tests (1) (in freescale narrowband test fixture, 50 ohm system) v dd = 13.6 vdc, i dq =10ma,p out =31w,f=520mhz common--source amplifier power gain g ps 16.5 17.7 19.0 db drain efficiency d 70.0 71.4 ? % load mismatch/ruggedness (in freescale test fixture, 50 ohm system, i dq =10ma) frequency (mhz) signal type vswr p out (w) test voltage, v dd result 520 cw >65:1 at all phase angles 47 (3 db overdrive) 17 no device degradation 1. measurement made with device in straight lead configuration before any lead forming oper ation is applied. lead forming is used for gull wing (gn) parts.
4 rf device data freescale semiconductor, inc. aft05ms031nr1 aft05ms031gnr1 typical characteristics 20 1 1000 08 4 v ds , drain--source voltage (volts) figure 2. capacitance versus drain--source voltage c, capacitance (pf) 12 10 16 0 5 4 v ds , drain--source voltage (volts) figure 3. drain current versus drain--source voltage 2 v gs =4.25vdc note: measured with both sides of the transistor tied together. 4 3 1 8121620 i ds , drain current (amps) 3.5 vdc 3.25 vdc 3vdc t a =25 c 2.75 vdc 250 10 9 90 t j , junction temperature ( c) figure 4. mttf versus junction temperature -- cw note: mttf value represents the total cumulative operating time under indicated test conditions. 10 7 10 6 10 4 110 130 150 170 190 mttf (hours) 210 230 10 8 10 5 v dd = 13.6 vdc 0 100 measured with 30 mv(rms)ac @ 1 mhz, v gs =0vdc c rss c iss c oss 3.75 vdc 6 7 4vdc i d =2.5amps 3.2 amps 3.9 amps
aft05ms031nr1 aft05ms031gnr1 5 rf device data freescale semiconductor, inc. 520 mhz narrowband production test fixture figure 5. aft05ms031nr1 narrowband test circuit component layout ? 520 mhz c10 c9 c13 c14 c15 c16 c11 c12 c7 c2 c8 l2 c5 c3 l1 c4 c6 aft05ms031n rev. 1 c1 b2 c17 c18 b1 b3 cut out area table 6. aft05ms031nr1 narrowband test circuit component designations and values ? 520 mhz part description part number manufacturer b1, b2, b3 rf beads, long 2743021447 fair--rite c1 22 f, 35 v tantalum capacitor t491x226k035at kemet c2, c14 0.01 f chip capacitors c0805c103k5rac kemet c3, c13 0.1 f chip capacitors cdr33bx104akws kemet c4 200 pf chip capacitor atc100b201jt300xt atc c5 6.2 pf chip capacitor atc100b6r2jt500xt atc c6 3.9 pf chip capacitor atc100b3r9jt500xt atc c7, c16 180 pf chip capacitors atc100b181jt200xt atc c8 10 pf chip capacitor atc100b100jt500xt atc c9, c10, c11, c12 36 pf chip capacitors atc100b360jt500xt atc c15 27 pf chip capacitor atc100b270jt500xt atc c17 7.5 pf chip capacitor atc100b7r5jt500xt atc c18 470 f, 63 v electrolytic capacitor sme63v471m12x25ll united chemi--con l1 43 nh, 10 turn inductor b10tjlc coilcraft l2 56 nh inductor 1812sms--56njlc coilcraft pcb 0.030 , r =2.55 ad255a arlon
6 rf device data freescale semiconductor, inc. aft05ms031nr1 aft05ms031gnr1 rf input rf output z1 0.199 0.082 microstrip z2 0.017 0.082 microstrip z3* 0.670 0.082 microstrip z4* 0.560 0.060 microstrip z5* 0.370 0.082 microstrip z6 0.079 0.082 microstrip z7 0.352 0.082 microstrip z8 0.190 0.270 microstrip z9 0.257 0.275 microstrip z10 0.145 0.275 microstrip z11 0.091 0.082 microstrip z12* 0.1322 0.082 microstrip z13* 0.1420 0.082 microstrip z14 0.315 0.082 microstrip * line length includes microstrip bends figure 6. aft05ms031nr1 narrowband test circuit schematic ? 520 mhz table 7. aft05ms031nr1 narrowband test circuit microstrips ? 520 mhz description microstrip description microstrip l1 z4 z3 c5 z1 z2 z8 z7 z6 z10 z9 l2 v ds v gs z5 z12 z11 z13 c11 z14 c2 c3 c4 c7 c6 c8 c9 c12 c16 c13 c14 c15 c17 c1 + c10 c18 +
aft05ms031nr1 aft05ms031gnr1 7 rf device data freescale semiconductor, inc. typical characteristics ? 520 mhz 0 0 25 123456 20 5 15 10 30 p out , output power (watts) f = 520 mhz v dd = 12.5 vdc p in =0.3w v dd = 13.6 vdc, p in =0.3w v dd = 12.5 vdc, p in =0.6w v dd = 13.6 vdc, p in =0.6w 35 40 50 v gs , gate--source voltage (volts) figure 7. output power versus gate--source voltage p in , input power (watts) g ps , power gain (db) 11 14 12 0.03 3 g ps 40 60 50 10 30 17 16 15 18 70 80 90 0.1 d , drain efficiency (%) p out v dd = 13.6 vdc, i dq =10ma f = 520 mhz 1 19 20 0 figure 8. power gain, output power and drain efficiency versus input power 45 20 p out , output power (watts) 13 d v dd = 13.6 vdc, i dq =10ma,p out =31wavg. f mhz z source ? z load ? 520 0.72 + j1.77 1.54 + j0.80 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 9. narrowband series equivalent source and load impedance ? 520 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
8 rf device data freescale semiconductor, inc. aft05ms031nr1 aft05ms031gnr1 380--450 mhz uhf wideband reference circuit, 50 ohm system table 8. 380--450 mhz uhf wideband performance (13.6 vdc, i dq = 100 ma, t a =25 c, cw) frequency (mhz) g ps (db) d (%) p1db (w) 380 18.7 64.1 31 420 18.6 67.0 31 450 18.3 68.1 31 table 9. load mismatch/ruggedness (in freescale reference circuit) frequency (mhz) signal type vswr p out (w) test voltage, v dd result 420 cw >65:1 at all phase angles 62 (3 db overdrive) 17 no device degradation
aft05ms031nr1 aft05ms031gnr1 9 rf device data freescale semiconductor, inc. 380--450 mhz uhf wideband reference circuit figure 10. aft05ms031nr1 uhf wideband reference circuit component layout ? 380--450 mhz * c4 and c5 are mounted vertically. c1 l1 c2 l2 l3 c4* c5* c3 r1 b1 c6 q1 c13 c15 c14 l4 c8 l5 l6 c9 l7 c12 c11 c10 v gs v ds c7 b2 j1 t o -- 2 7 0 -- 2 rev. 0 c17 c16 table 10. aft05ms031nr1 uhf wideband reference circuit component designations and values ? 380--450 mhz part description part number manufacturer b1 low current ferrite bead 2508051107y0 fair--rite b2 high current ferrite bead 2518065007y6 fair--rite c1, c5 56 pf chip capacitors atc600f560jt250xt atc c2 3.9 pf chip capacitor atc600f3r9bt250xt atc c3 18 pf chip capacitor atc600f180jt250xt atc c4 47 pf chip capacitor atc600f470jt250xt atc c6, c12, c15 240 pf chip capacitors atc600f241jt250xt atc c7 24 pf chip capacitor atc600f240jt250xt atc c8 68 pf chip capacitor atc600f680jt250xt atc c9 27 pf chip capacitor atc600f270jt250xt atc c10 8.2 pf chip capacitor atc600f8r2bt250xt atc c11 3.0 pf chip capacitor atc600f3r0bt250xt atc c13 0.1 f chip capacitor GRM21BR71H104KA01B murata c14 1 f chip capacitor grm21br71h105ka12l murata c16, c17 10 f chip capacitors grm31cr61h106ka12l murata j1 3 pin connector amp--9--146305--0 te connectivity l1, l2, l3, l6 5.5 nh inductors 0806sq--5n5glc coilcraft l4 17 nh inductor 0908sq--17nglc coilcraft l5 1.65 nh inductor 0906--2klc coilcraft l7 2.55 nh inductor 0906--3jlc coilcraft q1 rf power ldmos transistor aft05ms031nr1 freescale r1 62 ? , 1/4 w chip resistor rg2012n--620--bt1 susumu pcb 0.020 , r =4.9 s1000--2, fr4 shengyi
10 rf device data freescale semiconductor, inc. aft05ms031nr1 aft05ms031gnr1 rf input rf output z1, z27 0.034 0.060 microstrip z2 0.034 0.200 microstrip z3 0.034 0.056 microstrip z4 0.034 0.154 microstrip z5* 0.034 0.237 microstrip z6* 0.034 0.234 microstrip z7 0.034 0.010 microstrip z8, z24 0.034 0.083 microstrip z9 0.034 0.178 microstrip z10 0.240 0.048 microstrip z11 0.240 0.142 microstrip z12, z16 0.034 0.149 microstrip z13, z17* 0.034 0.085 microstrip z14 0.240 0.090 microstrip z15 0.240 0.186 microstrip z18 0.240 0.044 microstrip figure 11. aft05ms031nr1 uhf wideband reference circuit schematic ? 380--450 mhz table 11. aft05ms031nr1 uhf wideband reference circuit microstrips ? 380--450 mhz description microstrip description microstrip z2 z3 z14 r1 v gs z25 z26 c12 c17 c14 c13 c11 z4 c2 z5 z6 c3 z7 l1 l2 l3 c4 z8 c5 z9 z10 z11 b1 c7 z15 z18 z19 l4 c16 b2 z12 z13 z16 z17 c8 z20 z21 l5 c9 z22 z23 l6 l7 z24 c10 v ds z19 0.034 0.057 microstrip z20* 0.034 0.201 microstrip z21* 0.034 0.110 microstrip z22* 0.034 0.361 microstrip z23 0.034 0.112 microstrip z25 0.034 0.073 microstrip z26 0.034 0.077 microstrip * line length includes microstrip bends description microstrip z1 z27 c15 c6 c1
aft05ms031nr1 aft05ms031gnr1 11 rf device data freescale semiconductor, inc. typical characteristics ? 380--450 mhz uhf wideband reference circuit 370 g ps f, frequency (mhz) figure 12. power gain, output power and drain efficiency versus frequency at a constant input power ? 12.5 v 17 18 17.9 17.8 25 80 75 70 65 30 29 28 27 d , drain efficiency (%) d g ps , power gain (db) 17.7 17.6 17.5 17.4 17.3 17.2 17.1 380 390 400 410 420 430 440 460 60 26 p out ,output power (watts) v dd = 12.5 vdc, p in =0.5w(avg.) i dq = 100 ma p out 370 g ps f, frequency (mhz) figure 13. power gain, output power and drain efficiency versus frequency at a constant input power ? 13.6 v 17.5 18.5 18.4 18.3 30 80 75 70 65 35 34 33 32 d , drain efficiency (%) d g ps , power gain (db) 18.2 18.1 18 17.9 17.8 17.7 17.6 380 390 400 410 420 430 440 450 60 31 p out ,output power (watts) p out v dd = 13.6 vdc, p in =0.5w(avg.) i dq = 100 ma 450 460
12 rf device data freescale semiconductor, inc. aft05ms031nr1 aft05ms031gnr1 typical characteristics ? 380--450 mhz uhf wideband reference circuit 0 0 v gs , gate--source voltage (volts) figure 14. output power versus gate--source voltage 50 1 2 345 40 10 30 20 p out , output power (watts) f = 420 mhz v dd = 13.6 vdc, p in =0.5w 0 0 detail a 4 0.4 0.8 1.2 1.6 2 3 2 1 5 f = 420 mhz v dd = 13.6 vdc, p in =0.25w v dd = 12.5 vdc, p in =0.5w v dd = 12.5 vdc, p in =0.25w detail a v dd = 13.6 vdc, p in =0.5w v dd = 13.6 vdc, p in =0.25w v dd = 12.5 vdc, p in =0.5w v dd = 12.5 vdc, p in =0.25w p out , output power (watts) v gs , gate--source voltage (volts) 40 0 20 60 100 80 figure 15. power gain, output power and drain efficiency versus input power and frequency p in , input power (watts) g ps , power gain (db) 12 16 14 0.01 4 30 50 40 10 20 22 20 18 60 70 80 0.1 420 mhz p out v dd = 13.6 vdc, i dq = 100 ma 1 450 mhz 380 mhz g ps d 420 mhz 450 mhz 380 mhz 420 mhz 450 mhz 380 mhz d , drain efficiency (%) p out , output power (watts)
aft05ms031nr1 aft05ms031gnr1 13 rf device data freescale semiconductor, inc. 380--450 mhz uhf wideband reference circuit z source f = 380 mhz f = 450 mhz z load f = 380 mhz f = 450 mhz z o =5 ? v dd = 13.6 vdc, i dq =10ma,p out =31wavg. f mhz z source ? z load ? 380 1.57 + j1.94 2.53 -- j0.27 390 1.66 + j2.07 2.53 -- j0.26 400 1.74 + j2.16 2.56 -- j0.27 410 1.79 + j2.20 2.49 -- j0.29 420 1.79 + j2.21 2.38 -- j0.28 430 1.74 + j2.21 2.26 -- j0.24 440 1.62 + j2.23 2.11 -- j0.16 450 1.45 + j2.29 1.95 -- j0.05 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 16. uhf wideband series equivalent source and load impedance ? 380--450 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
14 rf device data freescale semiconductor, inc. aft05ms031nr1 aft05ms031gnr1 450--520 mhz uhf wideband reference circuit, 50 ohm system table 12. 450--520 mhz uhf wideband performance (13.6 vdc, i dq = 100 ma, t a =25 c, cw) frequency (mhz) g ps (db) d (%) p1db (w) 450 17.7 62.0 31 490 18.7 63.8 31 520 17.9 67.0 31 table 13. load mismatch/ruggedness (in freescale reference circuit) frequency (mhz) signal type vswr p out (w) test voltage, v dd result 490 cw >65:1 at all phase angles 62 (3 db overdrive) 17 no device degradation
aft05ms031nr1 aft05ms031gnr1 15 rf device data freescale semiconductor, inc. 450--520 mhz uhf wideband reference circuit figure 17. aft05ms031nr1 uhf wideband reference circuit component layout ? 450--520 mhz c1 l1 c2 l2 l3 c5 c3 b1 c16 q1 c15 c14 l4 c8 l5 l6 c10 l7 c17 c12 c11 v gs v ds c7 b2 j1 c6 c9 t o -- 2 7 0 -- 2 rev. 0 c4 r1 c19 c13 c18 table 14. aft05ms031nr1 uhf wideband reference circuit component designations and values ? 450--520 mhz part description part number manufacturer b1 low current ferrite bead 2508051107y0 fair--rite b2 high current ferrite bead 2518065007y6 fair--rite c1 56 pf chip capacitor atc600f560jt250xt atc c2 2.7 pf chip capacitor atc600f2r7bt250xt atc c3 12 pf chip capacitor atc600f120jt250xt atc c4, c9 27 pf chip capacitors atc600f270jt250xt atc c5, c8 33 pf chip capacitors atc600f330jt250xt atc c6 39 pf chip capacitor atc600f390jt250xt atc c7, c10 18 pf chip capacitors atc600f180jt250xt atc c11 8.2 pf chip capacitor atc600f8r2bt250xt atc c12 1.8 pf chip capacitor atc600f1r8bt250xt atc c13 0.1 f chip capacitor GRM21BR71H104KA01B murata c14 1 f chip capacitor grm21br71h105ka12l murata c15, c16, c17 240 pf chip capacitors atc600f241jt250xt atc c18, c19 10 f chip capacitors grm31cr61h106ka12l murata j1 3 pin connector amp--9--146305--0 te connectivity l1, l3 6.0 nh inductors 0806sq--6n0glc coilcraft l2, l6 5.5 nh inductors 0806sq5n5glc coilcraft l4 17 nh inductor 0908sq--17nglc coilcraft l5, l7 1.65 nh inductors 0906--2klc coilcraft q1 rf power ldmos transistor aft05ms031nr1 freescale r1 62 ? , 1/4 w chip resistor rg2012n--620--bt1 susumu pcb 0.020 , r =4.9 s1000--2, fr4 shengyi
16 rf device data freescale semiconductor, inc. aft05ms031nr1 aft05ms031gnr1 rf input rf output z1, z9, z29 0.034 0.060 microstrip z2 0.034 0.200 microstrip z3 0.034 0.128 microstrip z4 0.034 0.054 microstrip z5* 0.034 0.202 microstrip z6* 0.034 0.160 microstrip z7, z21 0.034 0.010 microstrip z8 0.034 0.115 microstrip z10 0.034 0.150 microstrip z11 0.240 0.010 microstrip z12 0.240 0.180 microstrip z13, z17 0.034 0.149 microstrip z14 0.034 0.084 microstrip z15 0.240 0.054 microstrip z16 0.240 0.170 microstrip z19 0.240 0.044 microstrip z20 0.034 0.057 microstrip z22 0.034 0.176 microstrip figure 18. aft05ms031nr1 uhf wideband reference circuit schematic ? 450--520 mhz table 15. aft05ms031nr1 uhf wideband reference circuit microstrips ? 450--520 mhz description microstrip description microstrip z2 z3 z15 r1 v gs z25 z26 c17 c19 c14 c13 c11 z4 c2 z5 z6 c3 z7 l1 l2 l3 c4 z8 c5 z9 z10 z11 b1 c7 z16 z19 z20 l4 c18 b2 z13 z14 z17 z18 c8 z21 c9 z22 z23 l5 l6 z24 c10 v ds z23* 0.034 0.118 microstrip* z24* 0.034 0.295 microstrip* z25 0.034 0.018 microstrip z26 0.034 0.177 microstrip z27 0.034 0.022 microstrip z28 0.034 0.188 microstrip z18 0.034 0.184 microstrip * line length includes microstrip bends description microstrip z1 z29 c6 z12 l7 z27 z28 c12 c15 c16 c1
aft05ms031nr1 aft05ms031gnr1 17 rf device data freescale semiconductor, inc. typical characteristics ? 450--520 mhz uhf wideband reference circuit 440 g ps f, frequency (mhz) figure 19. power gain, drain efficiency and output power versus frequency at a constant input power ? 12.5 v 16 18 17.8 17.6 26 70 68 66 64 60 30 29 28 d , drain efficiency (%) d g ps , power gain (db) 17.4 17.2 17 16.8 16.6 16.4 16.2 450 460 470 480 490 500 510 530 62 27 p out ,output power (watts) v dd = 12.5 vdc, p in =0.5w(avg.) i dq = 100 ma p out 440 g ps f, frequency (mhz) figure 20. power gain, drain efficiency and output power versus frequency at a constant input power ? 13.6 v 16 18.5 18.25 18 26 69 67 65 63 36 34 32 30 d , drain efficiency (%) d g ps , power gain (db) 17.75 17.5 17.25 17 16.75 16.5 16.25 460 480 500 520 61 28 p out ,output power (watts) p out v dd = 13.6 vdc, p in =0.5w(avg.) i dq = 100 ma 520 71 73 18.75 19 450 470 490 510 530
18 rf device data freescale semiconductor, inc. aft05ms031nr1 aft05ms031gnr1 typical characteristics ? 450--520 mhz uhf wideband reference circuit 0 0 v gs , gate--source voltage (volts) figure 21. output power versus gate--source voltage 50 1 2 345 40 10 30 20 p out , output power (watts) f = 490 mhz v dd = 13.6 vdc, p in =0.5w 0 0 detail a 20 0.5 1 1.5 22.5 15 10 5 25 f = 490 mhz v dd = 13.6 vdc, p in =0.25w v dd = 12.5 vdc, p in =0.5w v dd = 12.5 vdc, p in =0.25w detail a v dd = 13.6 vdc, p in =0.5w v dd = 13.6 vdc, p in =0.25w v dd = 12.5 vdc, p in =0.5w v dd = 12.5 vdc, p in =0.25w p out , output power (watts) v gs , gate--source voltage (volts) 6 60 33.5 figure 22. power gain, output power and drain efficiency versus input power and frequency p in , input power (watts) g ps , power gain (db) 12 16 14 0.01 3 40 0 20 20 18 60 80 0.1 490 mhz p out v dd = 13.6 vdc, i dq = 100 ma 1 g ps d 450 mhz 490 mhz 490 mhz 450 mhz 450 mhz p out , output power (watts) d , drain efficiency (%) 520 mhz 520 mhz 520 mhz
aft05ms031nr1 aft05ms031gnr1 19 rf device data freescale semiconductor, inc. 450--520 mhz uhf wideband reference circuit z source f = 520 mhz f = 450 mhz z load f = 520 mhz f = 450 mhz z o =5 ? v dd = 13.6 vdc, i dq = 100 ma, p out =31wavg. f mhz z source ? z load ? 450 1.37 + j1.64 2.57 -- j1.01 460 1.43 + j1.72 2.49 -- j1.03 470 1.47 + j1.79 2.38 -- j1.03 480 1.49 + j1.83 2.26 -- j1.01 490 1.47 + j1.86 2.11 -- j0.95 500 1.41 + j1.89 1.97 -- j0.87 510 1.32 + j1.93 1.82 -- j0.76 520 1.20 + j1.99 1.68 -- j0.62 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 23. uhf wideband series equivalent source and load impedance ? 450--520 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
20 rf device data freescale semiconductor, inc. aft05ms031nr1 aft05ms031gnr1 package dimensions
aft05ms031nr1 aft05ms031gnr1 21 rf device data freescale semiconductor, inc.
22 rf device data freescale semiconductor, inc. aft05ms031nr1 aft05ms031gnr1
aft05ms031nr1 aft05ms031gnr1 23 rf device data freescale semiconductor, inc.
24 rf device data freescale semiconductor, inc. aft05ms031nr1 aft05ms031gnr1
aft05ms031nr1 aft05ms031gnr1 25 rf device data freescale semiconductor, inc.
26 rf device data freescale semiconductor, inc. aft05ms031nr1 aft05ms031gnr1 product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in over--molded plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3263: bolt down mounting method for high power rf transistors and rfics in over--molded plastic packages ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 june 2012 ? initial release of data sheet
aft05ms031nr1 aft05ms031gnr1 27 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: http://www.reg.net/v2/webservices/freescale/docs/termsandconditions.htm. freescale, the freescale logo, altivec, c--5, codetest, codewarrior, coldfire, c--ware, energy efficient solutions logo, kinetis, mobilegt, powerquicc, processor expert, qoriq, qorivva, starcore, symphony, and vortiqa are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast, beekit, beestack, coldfire+, corenet, flexis, magniv, mxc, platform in a package, qoriq qonverge, quicc engine, ready play, safeassure, smartmos, turbolink, vybrid, and xtrinsic are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2012 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: aft05ms031n rev. 0, 6/2012

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